BYD Semiconductor has started mass production of its next-generation 4D millimeter-wave radar chip, marking a significant step in the company’s vertical integration strategy for smart driving technology. The new chip leverages BYD’s in-house Xuanji A3 smart-driving chip and is designed to support advanced driver assistance systems from Level 2 to Level 4.
BYD’s 4D Radar Chip: Key Features and Capabilities
The new 4D millimeter-wave radar chip from BYD Semiconductor is built on a 28-nanometer automotive-grade process and uses a satellite architecture centered around the Xuanji A3 smart-driving chip. This architecture enables the chip to support a wide range of smart driving applications, including highway navigation assistance, urban driving, automated parking, and blind-spot monitoring.
The chip offers a detection range of more than 400 meters (~248 miles), with a horizontal angular resolution of 0.8 degrees and a parking-grade range resolution of 0.05 meters. It integrates 8 transmit and 8 receive channels, and features a high-speed MIPI CSI-2 interface compatible with mainstream serializers and deserializers, allowing seamless integration with widely used smart-driving chip platforms.
Safety, Reliability, and Performance Standards
BYD’s radar chip is engineered to meet the ISO 26262 ASIL B functional-safety standard and AEC-Q100 automotive reliability requirements. Its operating junction-temperature range spans from minus 40 to 150 degrees Celsius, which BYD Semiconductor claims is the widest in the industry.
The chip has completed integration and tuning with the Xuanji A3 and meets the detection-performance requirements of Tier 1 module suppliers.
Xuanji A3: The Core of BYD’s Smart-Driving Platform
Unveiled in May, the Xuanji A3 is China’s first smart-driving chip built on a 4-nanometer process. It supports Level 3 and Level 4 autonomous driving and delivers more than 700 TOPS (trillion operations per second) of computing power per chip. When three Xuanji A3 chips are used together, the system can achieve over 2,100 TOPS.
BYD’s investment in semiconductor research and development has exceeded $14.8B (~AUD 20.8B), with a team of more than 7,000 members, four R&D bases, and five wafer fabs supporting ongoing innovation.
Competitor Comparison
BYD’s new 4D radar chip enters a competitive field that includes SGR Semiconductors, Indie Semiconductor, and Nanjing Maikeke. SGR Semiconductors specializes in high-frequency millimeter-wave radar chips for automotive and smart transportation applications, while Indie Semiconductor offers scalable radar processors for autonomous vehicles, targeting Level 2 to Level 4 driving systems. Nanjing Maikeke, supported by government R&D initiatives, focuses on advancing automotive 4D imaging radar technology within China.
These competitors are also pushing the boundaries of radar chip performance and integration, making the sector highly dynamic as automakers seek to enhance their smart driving capabilities.
Historical Context and Industry Trends
BYD became the global leader in battery electric vehicle (BEV) sales in 2025, with 4.6 million new energy vehicles sold globally that year, representing a 16% year-on-year increase. However, the company experienced a 15.7% year-on-year decline in recent months, reflecting broader market trends.
In-house chip development is now a key strategy among Chinese EV makers, with companies like Nio, Xpeng, and Li Auto also deploying proprietary smart-driving chips in their production vehicles.
Regional Availability
BYD’s semiconductor advancements are primarily focused on the Chinese market, but the company’s global ambitions suggest that these technologies could be integrated into vehicles sold in other regions in the future. The Xuanji A3 chip is expected to play a central role in upcoming BYD and Denza models.
Why this matters
The mass production of BYD’s 4D radar chip strengthens the company’s position in the rapidly evolving smart driving sector. By developing critical components in-house, BYD is building a competitive moat in the AI-driven automotive landscape and reducing reliance on external suppliers.
This move also reflects a broader trend among Chinese automakers to invest heavily in semiconductor technology, aiming to deliver safer, more capable autonomous driving features to consumers.
What this means for buyers
For buyers, BYD’s investment in advanced radar and smart-driving chips could translate into vehicles with improved safety, enhanced autonomous features, and better integration of driver assistance systems. As these technologies reach mass production, consumers can expect to see them in future BYD models, potentially offering a competitive edge over rivals.
Those considering a BYD vehicle should watch for upcoming models equipped with the Xuanji A3 and the new 4D radar chip, as these may offer significant advancements in smart driving capabilities.
Key Specs
- Radar Chip Process: 28-nanometer automotive-grade
- Detection Range: More than 400 meters (~248 miles)
- Horizontal Angular Resolution: 0.8 degrees
- Parking-Grade Range Resolution: 0.05 meters
- Transmit/Receive Channels: 8 transmit, 8 receive
- Operating Temperature Range: -40 to 150°C
- Functional Safety Standard: ISO 26262 ASIL B
- Computing Power (Xuanji A3): 700+ TOPS per chip, 2,100+ TOPS (3 chips)
